US 6,335,535 B1 · Method for implanting negative hydrogen ion and implanting apparatus

Abstract

A method for implanting negative hydrogen ions includes the following steps. Plasma containing hydrogen is generated. Negative hydrogen ions are generated in the plasma. An electric field is formed between the plasma and a substrate. Negative hydrogen ions from the plasma is accelerated by using the electric field so as to implant negative hydrogen ions into a predetermined depth of a substrate.

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Facts

Application

09/344,341Filed 25 Jun 1999

Granted

1 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification21 codes

H01J 37/32412
Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources: plasma immersion ion…
H10D 62/8325
Being Group IV materials comprising two or more elements, e.g. SiGe: silicon carbide
H10F 71/121
Manufacture or treatment of devices covered by this subclass: the active layers comprising only Group IV materials
H10P 30/204
Characterised by the semiconductor materials: into Group IV semiconductors

Method for implanting negative hydrogen ion and implanting apparatus

Life of this patent

Abstract

Claims0

Method for implanting negative hydrogen ion and implanting apparatus

Life of this patent

Abstract

Claims0