Systems and methods for aluminum ion beam generation source technology
AssigneeII-Vi Delaware, Inc.
InventorsAhmet Hassan, Raymond Pong, Jeremy Turcaud, John Schuur
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Abstract
An implantation device is disclosed. In particular, an implantation device includes an ionization chamber having a cathode and a repeller arranged therein. A source of aluminum ions is including within the chamber, wherein a displacing gas is introduced to the chamber during an ionization process to yield a beam of energetic aluminum ions.
Claims23
An ion implantation device serving as a source of aluminum ions for an ionization process, the ion implantation device comprising:
- a first segment of a first shape;
- and
- a second segment of a second shape, wherein the first segment and second segment are fastened together to form a single plug configured to eject aluminum ions in a presence of a plasma;
- and
- wherein the ion implantation device comprises two of the first segment and three of the second segment.
An ion implantation system comprising:
- a housing forming an ionization chamber;
- a cathode and a repeller arranged within the ionization chamber;
- and
- an ion implantation device serving as a source of aluminum ions, the ion implantation device comprising first and second segments fastened together and extending into the ionization chamber and configured to eject aluminum ions in a presence of a plasma;
- and
- wherein the housing includes a hole configured to receive a fastener to secure the ion implantation device to a wall of the housing.
An ion implantation system comprising:
- a housing forming an ionization chamber;
- a cathode and a repeller arranged within the ionization chamber;
- and
- an ion implantation device serving as a source of aluminum ions, the ion implantation device comprising first and second segments fastened together and extending into the ionization chamber and configured to eject aluminum ions in a presence of a plasma;
- and
- a fastener to fasten the first and second segments together.
An ion implantation device serving as a source of aluminum ions for an ionization process, the ion implantation device comprising:
- a first segment of a first shape;
- a second segment of a second shape;
- and
- a fastener that extends through a channel within the first and second segments to fasten the first and second segments together to form a plug configured to eject aluminum ions in a presence of a plasma.
Dependencies are inferred from the claim text.