Plasma generating apparatus for large area plasma processing
AssigneeMartin Marietta Energy Systems, Inc.
InventorsChin-Chi Tsai, Steven M. Gorbatkin, Lee A. Berry
Life of this patent
Estimating the term…
Loading patent…
AssigneeMartin Marietta Energy Systems, Inc.
InventorsChin-Chi Tsai, Steven M. Gorbatkin, Lee A. Berry
Estimating the term…
A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.
A plasma generating apparatus comprising:
A plasma etch apparatus for large area plasma etching of a sample comprising:
A plasma generating apparatus comprising:
A plasma generating apparatus comprising:
Dependencies are inferred from the claim text.