G11C 2213/70
Resistive array aspects
G11C2213/70 (Resistive array aspects) appears on 6,182 US grants and 6,619 published applications in this corpus.
Search patents in G11C- Granted patents
- 6,182
- Published applications
- 6,619
- Assignees
- 557
- Inventors
- 5,018
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 6 | 0 |
| 1999 | 2 | 0 |
| 2000 | 8 | 0 |
| 2001 | 14 | 5 |
| 2002 | 20 | 56 |
| 2003 | 36 | 99 |
| 2004 | 78 | 143 |
| 2005 | 107 | 170 |
| 2006 | 140 | 200 |
| 2007 | 148 | 226 |
| 2008 | 169 | 295 |
| 2009 | 163 | 322 |
| 2010 | 253 | 364 |
| 2011 | 326 | 360 |
| 2012 | 350 | 307 |
| 2013 | 358 | 294 |
| 2014 | 342 | 380 |
| 2015 | 414 | 326 |
| 2016 | 380 | 340 |
| 2017 | 365 | 286 |
| 2018 | 279 | 284 |
| 2019 | 362 | 408 |
| 2020 | 376 | 388 |
| 2021 | 363 | 369 |
| 2022 | 302 | 343 |
| 2023 | 252 | 272 |
| 2024 | 276 | 171 |
| 2025 | 192 | 126 |
| 2026 | 78 | 85 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 2213/79Array wherein the access device being a transistorIndexing code2,325
- G11C 2213/71Three dimensional arrayIndexing code2,161
- G11C 2213/72Array wherein the access device being a diodeIndexing code1,495
- G11C 2213/77Array wherein the memory element being directly connected to the bit linesIndexing code1,156
- G11C 2213/76Array using an access device for each cell which being not aIndexing code728
- G11C 2213/74Array wherein each memory cell has more than one access deviceIndexing code489
- G11C 2213/82Array having, for accessing a cell, a word line, a bit lineIndexing code406
- G11C 2213/75Array having a nand structure comprisingIndexing code331
All 12 subgroupsShow fewer
- G11C 2213/81Array wherein the array conductorsIndexing code270
- G11C 2213/78Array wherein the memory cells of a group share an access deviceIndexing code263
- G11C 2213/73Array where access device functionIndexing code222
- G11C 2213/80Array wherein the substrate, the cell, the conductors and the access deviceIndexing code15
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Neural Network system, high density embedded-artificial synaptic element and operating method thereof29 Sep 2026US 12,748,957 B2National Tsing Hua University
- Structure for multiple sense amplifiers of memory device29 Sep 2026US 12,749,529 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory circuit comprising electronic cells with ovonic threshold switching layers and a control circuit29 Sep 2026US 12,751,017 B2STMicroelectronics International N. V.
- High signal-to-noise-ratio memory cell programming for in-memory computing3 Sep 2026US 2026/0260689 A1OmniVision Technologies, Inc.
- Device and method with multidimensional vector neural network27 Aug 2026US 2026/0252840 A1Samsung Electronics Co., Ltd.
- Programming circuit, integrated circuit, and method27 Aug 2026US 2026/0252869 A1Taiwan Semiconductor Manufacturing Company.Ltd
- In-memory acceleration using 6t-rrams with signed weight values13 Aug 2026US 2026/0237431 A1Government of the United States as Represented by the Secretary of the Air Force
- Efuse bit-cell in stacking structure13 Aug 2026US 2026/0237448 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Vertically stacked field programmable nonvolatile memory and method of fabrication1,159US 6,034,882 AMatrix Semiconductor, Inc. · 2000
- Vertically stacked field programmable nonvolatile memory and method of fabrication621US 6,185,122 B2Matrix Semiconductor, Inc. · 2001
- Molecular wire crossbar memory590US 6,128,214 AHewlett-Packard Company · 2000
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Automated sorting system for matrices with memory480US 6,329,139 B1Discovery Partners International, Inc. · 2001