G11C 2213/71
Three dimensional array
G11C2213/71 (Three dimensional array) appears on 2,161 US grants and 2,330 published applications in this corpus.
Search patents in G11C- Granted patents
- 2,161
- Published applications
- 2,330
- Assignees
- 195
- Inventors
- 1,995
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 2 |
| 2002 | 8 | 20 |
| 2003 | 6 | 25 |
| 2004 | 26 | 22 |
| 2005 | 21 | 27 |
| 2006 | 18 | 32 |
| 2007 | 23 | 35 |
| 2008 | 34 | 77 |
| 2009 | 26 | 99 |
| 2010 | 64 | 108 |
| 2011 | 100 | 152 |
| 2012 | 118 | 121 |
| 2013 | 147 | 136 |
| 2014 | 158 | 156 |
| 2015 | 196 | 147 |
| 2016 | 151 | 136 |
| 2017 | 134 | 98 |
| 2018 | 94 | 120 |
| 2019 | 137 | 159 |
| 2020 | 145 | 162 |
| 2021 | 157 | 169 |
| 2022 | 120 | 118 |
| 2023 | 97 | 94 |
| 2024 | 99 | 54 |
| 2025 | 57 | 34 |
| 2026 | 20 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Differential subthreshold read of memory cell pair in a memory device22 Sep 2026US 12,744,083 B2Micron Technology, Inc.
- Forward-looking determination of read voltage using memory cell patterns8 Sep 2026US 12,731,639 B2Micron Technology, Inc.
- Streaming mode for accessing memory cells in a memory device18 Aug 2026US 12,712,012 B2Micron Technology, Inc.
- Resistive memory device18 Aug 2026US 12,713,621 B2Samsung Electronics Co., Ltd.
- Memory array having air gaps18 Aug 2026US 12,713,622 B2Micron Technology, Inc.
- 3d semiconductor device and structure with metal layers and a power delivery path13 Aug 2026US 2026/0239658 A1Monolithic 3D Inc.
- Semiconductor device, electronic apparatus including the same, and method of manufacturing the semiconductor device13 Aug 2026US 2026/0239674 A1Samsung Electronics Co., Ltd.
- Sequence for first fire and forming in cross-point arrays6 Aug 2026US 2026/0229285 A1SanDisk Technologies LLC
- Memory device comprising electro-chemical layer, method for manufacturing memory device and method for driving memory device30 Jul 2026US 2026/0223374 A1Samsung Electronics Co., Ltd.
- Resistive random-access memory with hybrid bonding integration18 Jun 2026US 2026/0171151 A1Hefei Reliance Memory Limited
Most cited
By later US patents
- Vertically stacked field programmable nonvolatile memory and method of fabrication1,159US 6,034,882 AMatrix Semiconductor, Inc. · 2000
- Vertically stacked field programmable nonvolatile memory and method of fabrication621US 6,185,122 B2Matrix Semiconductor, Inc. · 2001
- Three-dimensional (3D) programmable device422US 6,501,111 B1Intel Corporation · 2002
- Electrically addressable passive device, method for electrical addressing of the same and uses of the device and the method377US 6,055,180 AThin Film Electronics ASA · 2000
- Vertically stacked field programmable nonvolatile memory and method of fabrication358US 6,351,406 B1Matrix Semiconductor, Inc. · 2002