Memory device comprising electro-chemical layer, method for manufacturing memory device and method for driving memory device

A method of driving a memory device, wherein

• the memory device comprising
• a substrate,
• a channel layer on a surface of the substrate and comprising an oxygen ion,
• a gate electrode between the substrate and the channel layer,
• an electro-chemical layer between the channel layer and the gate electrode and comprising oxygen ions, and
• a gate oxide layer between the gate electrode and the electro-chemical layer, and
• performing a write operation or an erase operation when a voltage is applied to the gate electrode by changing first values of an electrical conductivity and a threshold voltage Vth of the channel layer differently from second values before the voltage is applied to the gate electrode, and
• a concentration of the oxygen ions included in the electro-chemical layer is less than 90%.