Semiconductor device, electronic apparatus including the same, and method of manufacturing the semiconductor device

A semiconductor device comprising:

• a channel including an n-type first channel and a p-type second channel on the n-type first channel;
• a source electrode and a drain electrode electrically connected to the channel;
• a gate electrode spaced apart from the channel;
• and
• a gate insulating layer between the channel and the gate electrode, wherein
• the p-type second channel comprises InaTebOc, and
• in InaTebOc, a+b=100, a<50, b>50, and c is less than a chemical stoichiometric value.

A method of manufacturing a semiconductor device, the method comprising:

• forming a channel on a substrate, the channel comprising indium (In), tellurium (Te), and oxygen (O);
• adjusting a composition of the channel to form InaTebOc, wherein a<50, b>50, and c is less than a chemical stoichiometric value;
• forming a source electrode on one surface of the channel and forming a drain electrode on an opposite surface of the channel;
• forming a gate insulating layer on the channel;
• and
• forming a gate electrode on the gate insulating layer.