G11C 2213/00
Indexing scheme relating to g11c13/00 for features not covered by this group
Official title: Indexing scheme relating to G11C13/00 for features not covered by this group
G11C2213/00 (Indexing scheme relating to g11c13/00 for features not covered by this group) appears on 7,337 US grants and 7,866 published applications in this corpus.
Search patents in G11C- Granted patents
- 7,337
- Published applications
- 7,866
- Assignees
- 724
- Inventors
- 6,095
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 9 | 0 |
| 1999 | 5 | 0 |
| 2000 | 13 | 0 |
| 2001 | 19 | 6 |
| 2002 | 27 | 72 |
| 2003 | 46 | 122 |
| 2004 | 101 | 192 |
| 2005 | 145 | 243 |
| 2006 | 182 | 256 |
| 2007 | 188 | 287 |
| 2008 | 206 | 380 |
| 2009 | 212 | 387 |
| 2010 | 324 | 427 |
| 2011 | 394 | 420 |
| 2012 | 401 | 364 |
| 2013 | 412 | 359 |
| 2014 | 419 | 444 |
| 2015 | 485 | 377 |
| 2016 | 454 | 381 |
| 2017 | 408 | 338 |
| 2018 | 327 | 342 |
| 2019 | 420 | 472 |
| 2020 | 423 | 445 |
| 2021 | 433 | 419 |
| 2022 | 348 | 397 |
| 2023 | 287 | 304 |
| 2024 | 302 | 198 |
| 2025 | 219 | 140 |
| 2026 | 94 | 94 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Neural Network system, high density embedded-artificial synaptic element and operating method thereof29 Sep 2026US 12,748,957 B2National Tsing Hua University
- Structure for multiple sense amplifiers of memory device29 Sep 2026US 12,749,529 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory circuit comprising electronic cells with ovonic threshold switching layers and a control circuit29 Sep 2026US 12,751,017 B2STMicroelectronics International N. V.
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
- High signal-to-noise-ratio memory cell programming for in-memory computing3 Sep 2026US 2026/0260689 A1OmniVision Technologies, Inc.
- Device and method with multidimensional vector neural network27 Aug 2026US 2026/0252840 A1Samsung Electronics Co., Ltd.
- Programming circuit, integrated circuit, and method27 Aug 2026US 2026/0252869 A1Taiwan Semiconductor Manufacturing Company.Ltd
- In-memory acceleration using 6t-rrams with signed weight values13 Aug 2026US 2026/0237431 A1Government of the United States as Represented by the Secretary of the Air Force
Most cited
By later US patents
- Vertically stacked field programmable nonvolatile memory and method of fabrication1,159US 6,034,882 AMatrix Semiconductor, Inc. · 2000
- Chalcogenide memory cell with a plurality of chalcogenide electrodes671US 5,920,788 AMicron Technology, Inc. · 1999
- Vertically stacked field programmable nonvolatile memory and method of fabrication621US 6,185,122 B2Matrix Semiconductor, Inc. · 2001
- Molecular wire crossbar memory590US 6,128,214 AHewlett-Packard Company · 2000
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000