Structure for multiple sense amplifiers of memory device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHiroki Noguchi, Ku-Feng Lin
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Abstract
A memory device is provided. The memory device includes several sense amplifiers and at least one reference cell. Each of the sense amplifiers has a first terminal and a second terminal. The first terminals of the sense amplifiers are coupled to a memory cell block, and the second terminals of the sense amplifiers are coupled together to transmit a read current. The at least one reference cell transmits the read current to a ground terminal. The at least one reference cell has a decreased resistance value when a number N of the sense amplifiers increases.
Claims20
A memory device, comprising:
- a memory cell block comprising a plurality of rows of memory cells;
- and
- a plurality of sense amplifiers, wherein a first terminal of each of the plurality of sense amplifiers is coupled to a corresponding row in the plurality of rows of memory cells,
- wherein a second terminal of each of the plurality of sense amplifiers is coupled to at least one reference cell having a resistance that is associated with resistances of the memory cells and a number N of the plurality of sense amplifiers.
A memory device, comprising:
- at least one reference cell configured to transmit a first current from a node to a ground;
- and
- a plurality of sense amplifiers each comprising a first terminal and a second terminal,
- wherein each of the plurality of sense amplifiers is configured to compare a second current and a third current, wherein the second current flows from the first terminal to a memory cell block, and the third current flows from the second terminal to the node,
- wherein a resistance of the at least one reference cell is associated with a number of the plurality of sense amplifiers.
A method, comprising:
- selecting, by a first multiplexer, a first line of a plurality of first data lines to transmit a first current received from a node, wherein each of the first data lines is coupled to a corresponding column among columns of a plurality of magnetic tunnel junction (MTJ) cells;
- according to a number of a plurality of sense amplifiers, selecting a first row from rows of the MTJ cells to transmit the first current to a ground through a first MTJ cell that is in the first row and a first column coupled to the first line;
- and
- comparing a second current and a third current by a first sense amplifier of the plurality of sense amplifiers, wherein the second current flows from a first terminal of the sense amplifier to a memory cell block, and the third current flows from the second terminal of the sense amplifier to the node.
Dependencies are inferred from the claim text.