G11C 2213/50
Resistive cell structure aspects
G11C2213/50 (Resistive cell structure aspects) appears on 1,188 US grants and 1,260 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,188
- Published applications
- 1,260
- Assignees
- 255
- Inventors
- 1,666
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 3 | 0 |
| 2000 | 5 | 0 |
| 2001 | 3 | 0 |
| 2002 | 3 | 5 |
| 2003 | 1 | 19 |
| 2004 | 11 | 23 |
| 2005 | 24 | 30 |
| 2006 | 19 | 31 |
| 2007 | 22 | 41 |
| 2008 | 28 | 56 |
| 2009 | 22 | 53 |
| 2010 | 53 | 72 |
| 2011 | 61 | 78 |
| 2012 | 76 | 82 |
| 2013 | 81 | 75 |
| 2014 | 85 | 74 |
| 2015 | 81 | 62 |
| 2016 | 70 | 56 |
| 2017 | 72 | 62 |
| 2018 | 48 | 62 |
| 2019 | 75 | 92 |
| 2020 | 74 | 73 |
| 2021 | 85 | 72 |
| 2022 | 52 | 63 |
| 2023 | 39 | 34 |
| 2024 | 41 | 19 |
| 2025 | 35 | 16 |
| 2026 | 11 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 2213/52Structure characterized by the electrode material, shape, etcIndexing code438
- G11C 2213/56Structure including two electrodes, a memory active layer and a so calledIndexing code324
- G11C 2213/51Structure including a barrier layer preventing or limiting migration, diffusion of ionsIndexing code243
- G11C 2213/53Structure wherein the resistive material being in a transistorIndexing code205
- G11C 2213/55Structure including two electrodes, a memory active layer and at least twoIndexing code153
- G11C 2213/54Structure including a tunneling barrier layer, the memory effect implying the modificationIndexing code67
Recent patents
- Bottom electrode structure in memory device11 Aug 2026US 12,707,901 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Heat dissipation in resistive memories11 Aug 2026US 12,707,903 B2Virginia Tech Intellectual Properties, Inc.
- Temporal kernel devices, temporal kernel computing systems, and methods of their operation16 Jun 2026US 12,660,205 B2Seoul National University R&Db Foundation
- Non-volatile memory device and method for driving same21 Apr 2026US 12,610,559 B2Daegu Gyeongbuk Institute of Science and Technology
- Resistive random-access memory devices with a via device structure21 Apr 2026US 12,610,752 B2TetraMem Inc.
- Capacitive synaptic device13 Aug 2026US 2026/0239634 A1Semron GmbH
- Semiconductor device, electronic apparatus including the same, and method of manufacturing the semiconductor device13 Aug 2026US 2026/0239674 A1Samsung Electronics Co., Ltd.
- Socket design for a memory device4 Jun 2026US 2026/0155173 A1Micron Technology, Inc.
- Memory device and driving method thereof30 Apr 2026US 2026/0122917 A1Samsung Electronics Co., Ltd.
- Rram structure and method of fabricating the same2 Apr 2026US 2026/0096356 A1United Microelectronics Corp.
Most cited
By later US patents
- Chalcogenide memory cell with a plurality of chalcogenide electrodes671US 5,920,788 AMicron Technology, Inc. · 1999
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Programmable metallization cell structure and method of making same441US 5,761,115 AArizona Board of Regents · 1998
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002