G11C 2213/53
Structure wherein the resistive material being in a transistor
Official title: Structure wherein the resistive material being in a transistor, e.g. gate
G11C2213/53 (Structure wherein the resistive material being in a transistor) appears on 205 US grants and 230 published applications in this corpus.
Search patents in G11C- Granted patents
- 205
- Published applications
- 230
- Assignees
- 89
- Inventors
- 397
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 1 | 2 |
| 2005 | 3 | 5 |
| 2006 | 0 | 2 |
| 2007 | 2 | 3 |
| 2008 | 0 | 8 |
| 2009 | 2 | 7 |
| 2010 | 6 | 10 |
| 2011 | 12 | 15 |
| 2012 | 9 | 13 |
| 2013 | 11 | 16 |
| 2014 | 15 | 16 |
| 2015 | 15 | 13 |
| 2016 | 19 | 16 |
| 2017 | 19 | 19 |
| 2018 | 13 | 8 |
| 2019 | 12 | 9 |
| 2020 | 8 | 6 |
| 2021 | 9 | 13 |
| 2022 | 16 | 21 |
| 2023 | 7 | 11 |
| 2024 | 14 | 5 |
| 2025 | 9 | 7 |
| 2026 | 1 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Non-volatile memory device and method for driving same21 Apr 2026US 12,610,559 B2Daegu Gyeongbuk Institute of Science and Technology
- Resistive memory cell and associated cell array structure23 Dec 2025US 12,507,420 B2eMemory Technology Inc.
- Memory cell including programmable resistors with transistor components23 Sep 2025US 12,424,279 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric tunnel junction memory devices with enhanced read window23 Sep 2025US 12,426,272 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same20 May 2025US 12,310,036 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Capacitive synaptic device13 Aug 2026US 2026/0239634 A1Semron GmbH
- Semiconductor device, electronic apparatus including the same, and method of manufacturing the semiconductor device13 Aug 2026US 2026/0239674 A1Samsung Electronics Co., Ltd.
- Memory device and driving method thereof30 Apr 2026US 2026/0122917 A1Samsung Electronics Co., Ltd.
- Three-dimensional ferroelectric tunnel junction device for multiply-accumulate operations29 Jan 2026US 2026/0033252 A1Micron Technology, Inc.
- Memory cell including programmable resistors with transistor components27 Nov 2025US 2025/0364047 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Phase change memory cell and manufacturing method286US 7,688,619 B2Macronix International Co., Ltd. · 2010
- Non-volatile resistance switching memories and methods of making same229US 7,778,063 B2Symetrix Corporation · 2010
- Field-effect transistor with perovskite oxide channel136US 5,418,389 AMitsubishi Chemical Corporation · 1995
- Memory using variable tunnel barrier widths112US 7,538,338 B2Unity Semiconductor Corporation · 2009
- NAND architecture having a resistive memory cell connected to a control gate of a field-effect transistor81US 8,320,160 B2Crossbar, Inc. · 2012