Back to results
US 2026/0239634 A1Published application
Capacitive synaptic device
AssigneeSemron GmbH
InventorKai-Uwe Demasius
Life of this patent
Estimating the term…
Abstract
This disclosure describes a capacitive synaptic device and the operation of the device. The device includes a semiconductor layer with two distinct regions, each having a specific doping type. A gate electrode is positioned on the semiconductor layer, separated by a dielectric layer. The configuration ensures that neither the gate electrode nor the dielectric layer overlaps the two doped regions.
Claims20
A capacitive synaptic device, comprising:
- a semiconductor layer including a first region with a first doping type and a second region with a second doping type;
- a gate electrode disposed on the semiconductor layer;
- and
- a dielectric layer disposed between the gate electrode and the semiconductor layer, wherein the gate electrode and/or the dielectric layer are configured to not overlap at least one of the first region or the second region.
1 more element
A method to operate capacitive synaptic device, comprising:
- generating voltage difference between a gate electrode and a semiconductor layer, the gate electrode disposed on the semiconductor layer, and the semiconductor layer having an adjustable capacitance and comprises a first doped region and a second doped region;
- based on the voltage difference, accumulating an electrical charge in a dielectric layer disposed between the gate electrode and the semiconductor layer;
- and
- increasing the adjustable capacitance of the semiconductor layer to discharge the electrical charge in the dielectric layer,
- wherein the gate electrode and/or the dielectric layer are configured not to overlap at least one of the first doped region and the second doped region.
2 more elements
Dependencies are inferred from the claim text.