G11C 2213/51
Structure including a barrier layer preventing or limiting migration, diffusion of ions
Official title: Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode
G11C2213/51 (Structure including a barrier layer preventing or limiting migration, diffusion of ions) appears on 243 US grants and 262 published applications in this corpus.
Search patents in G11C- Granted patents
- 243
- Published applications
- 262
- Assignees
- 83
- Inventors
- 404
- Latest grant
- 30 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 2 |
| 2003 | 1 | 9 |
| 2004 | 1 | 6 |
| 2005 | 7 | 10 |
| 2006 | 10 | 5 |
| 2007 | 4 | 10 |
| 2008 | 8 | 18 |
| 2009 | 3 | 11 |
| 2010 | 11 | 13 |
| 2011 | 15 | 22 |
| 2012 | 18 | 14 |
| 2013 | 14 | 10 |
| 2014 | 15 | 13 |
| 2015 | 11 | 8 |
| 2016 | 8 | 6 |
| 2017 | 12 | 12 |
| 2018 | 15 | 14 |
| 2019 | 19 | 30 |
| 2020 | 18 | 15 |
| 2021 | 20 | 16 |
| 2022 | 9 | 10 |
| 2023 | 6 | 3 |
| 2024 | 6 | 4 |
| 2025 | 5 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Memory device with low density thermal barrier30 Sep 2025US 12,431,407 B2Micron Technology, Inc.
- High electron affinity dielectric layer to improve cycling12 Aug 2025US 12,389,814 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including selector layer5 Aug 2025US 12,382,636 B2SK hynix Inc.
- Resistive memory apparatus and operating method thereof and memory cell array thereof29 Jul 2025US 12,374,395 B2Winbond Electronics Corp.
- Two-terminal metastable mixed-conductor memristive devices18 Feb 2025US 12,229,652 B2International Business Machines Corporation
- High electron affinity dielectric layer to improve cycling6 Nov 2025US 2025/0344617 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device with low density thermal barrier17 Oct 2024US 2024/0347418 A1Micron Technology, Inc.
- Resistive memory apparatus and operating method thereof and memory cell array thereof11 Jul 2024US 2024/0233819 A9Winbond Electronics Corp.
- Non-volatile memory structure with positioned doping4 Jul 2024US 2024/0224821 A1Hefei Reliance Memory Limited
- Resistive memory apparatus and operating method thereof and memory cell array thereof25 Apr 2024US 2024/0135990 A1Winbond Electronics Corp.
Most cited
By later US patents
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Programmable metallization cell structure and method of making same441US 5,761,115 AArizona Board of Regents · 1998
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Composite memory material comprising a mixture of phase-change memory material and dielectric material389US 5,825,046 AEnergy Conversion Devices, Inc. · 1998
- Programmable metallization cell structure and method of making same327US 6,084,796 AArizona Board of Regents · 2000