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US 12,229,652 B2Granted
Two-terminal metastable mixed-conductor memristive devices
AssigneeInternational Business Machines Corporation
InventorsKevin W. Brew, Talia S. Gershon, Seyoung Kim, Jerry D. Tersoff
Life of this patent
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Abstract
Methods for setting a resistance include applying a voltage across a memristive device, that exceeds a threshold based on a difference in chemical potential between a first material and a second material, to change a resistance of the memristive device. The memristive device includes a barrier layer of the second material that is formed between two metastable layers of the first material.
Claims18
A method for setting a resistance, comprising:
- applying a voltage across a memristive device, that exceeds a threshold based on a difference in chemical potential between a first material and a second material, to change a resistance of the memristive device, wherein the memristive device includes a barrier layer of the second material that is formed between two metastable layers of the first material, wherein each metastable layer comprises a conductive portion with a first lithium ion concentration and an insulator portion with a second lithium ion concentration.
A method for setting a resistance, comprising:
- applying a voltage across a memristive device, that exceeds a threshold based on a difference in chemical potential between a first material and a second material, to change a resistance of the memristive device, wherein the memristive device includes a barrier layer of the second material that is formed between two metastable layers of the first material;
- cycling positive and negative voltages that exceed the threshold;
- halting the cycling of positive and negative voltages responsive to a determination that a resistance symmetric response has stabilized.
A method for setting a resistance, comprising:
- applying a voltage across a memristive device, that exceeds a threshold based on a difference in chemical potential between a first material that comprises a lithium cobalt oxide and a second material that comprises Li4Ti5O12, to change a resistance of the memristive device, wherein the memristive device includes a barrier layer of the second material that is formed between two metastable layers of the first material;
- cycling positive and negative voltages that exceed the threshold;
- halting the cycling of positive and negative voltages responsive to a determination that the symmetric response has stabilized.
Dependencies are inferred from the claim text.