Semiconductor device including selector layer
AssigneeSK hynix Inc.
InventorJae Hyun Han
Life of this patent
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Abstract
A semiconductor device may include: a first conductive layer; a second conductive layer spaced apart from the first conductive layer; a tunnel insulating layer interposed between the first conductive layer and the second conductive layer and disposed adjacent to the first conductive layer; a charge blocking layer interposed between the first conductive layer and the second conductive layer and disposed adjacent to the second conductive layer; and a selector layer interposed between the tunnel insulating layer and the charge blocking layer, wherein the semiconductor device functions as a self-selecting memory.
Claims13
A semiconductor device comprising:
- a first conductive layer;
- a second conductive layer spaced apart from the first conductive layer;
- a tunnel insulating layer interposed between the first conductive layer and the second conductive layer and disposed adjacent to the first conductive layer;
- a charge blocking layer interposed between the first conductive layer and the second conductive layer and disposed adjacent to the second conductive layer;
- and
- a selector layer interposed between the tunnel insulating layer and the charge blocking layer,
- wherein the semiconductor device functions as a self-selecting memory,
- wherein the charge blocking layer has a thickness greater than a thickness of the tunnel insulating layer, and
- wherein the charge blocking layer has a dielectric constant higher than a dielectric constant of the tunnel insulating layer.
A semiconductor device comprising:
- a tunnel insulating layer;
- a charge blocking layer;
- and
- a selector layer interposed between the tunnel insulating layer and the charge blocking layer,
- wherein the semiconductor device switches between different resistance states depending on whether charges are trapped to trap sites of the selector layer,
- wherein the charge blocking layer has a thickness greater than a thickness of the tunnel insulating layer, and
- wherein the charge blocking layer has a dielectric constant higher than a dielectric constant of the tunnel insulating layer.
Dependencies are inferred from the claim text.