G11C 2213/55
Structure including two electrodes, a memory active layer and at least two
Official title: Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
G11C2213/55 (Structure including two electrodes, a memory active layer and at least two) appears on 153 US grants and 163 published applications in this corpus.
Search patents in G11C- Granted patents
- 153
- Published applications
- 163
- Assignees
- 58
- Inventors
- 289
- Latest grant
- 19 Aug 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 1 | 2 |
| 2004 | 1 | 4 |
| 2005 | 3 | 2 |
| 2006 | 2 | 2 |
| 2007 | 2 | 10 |
| 2008 | 8 | 10 |
| 2009 | 4 | 9 |
| 2010 | 11 | 10 |
| 2011 | 7 | 13 |
| 2012 | 12 | 17 |
| 2013 | 14 | 13 |
| 2014 | 16 | 19 |
| 2015 | 21 | 13 |
| 2016 | 12 | 4 |
| 2017 | 7 | 4 |
| 2018 | 7 | 4 |
| 2019 | 3 | 12 |
| 2020 | 8 | 2 |
| 2021 | 9 | 7 |
| 2022 | 0 | 1 |
| 2023 | 1 | 2 |
| 2024 | 1 | 2 |
| 2025 | 3 | 0 |
By publication year.
Recent patents
- Piezoelectric memory19 Aug 2025US 12,396,376 B2International Business Machines Corporation
- Semiconductor device including resistance change layer and metal particle-embedded metal-organic framework layer and method of manufacturing the same10 Jun 2025US 12,329,047 B2SK hynix Inc.
- Information processing device and method of driving information processing device18 Feb 2025US 12,232,436 B2National Institute of Advanced Industrial Science and Technology
- Nonvolatile phase change material logic device27 Feb 2024US 11,915,751 B2International Business Machines Corporation
- Selector device for two-terminal memory3 Oct 2023US 11,776,626 B2Crossbar, Inc.
- Non-volatile memory and methods of fabricating the same8 Aug 2024US 2024/0268126 A1Nanyang Technological University
- Piezoelectric memory2 May 2024US 2024/0147873 A1International Business Machines Corporation
- Semiconductor device including resistance change layer and metal particle-embedded metal-organic framework layer and method of manufacturing the same14 Sep 2023US 2023/0292636 A1SK hynix Inc.
- Nonvolatile phase change material logic device16 Mar 2023US 2023/0083308 A1International Business Machines Corporation
- Information processing device and method of driving information processing device22 Dec 2022US 2022/0407003 A1National Institute of Advanced Industrial Science and Technology
Most cited
By later US patents
- Microelectronic programmable device and methods of forming and programming the same137US 6,635,914 B2Axon Technologies Corporation · 2003
- Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same109US 6,825,489 B2Axon Technologies Corporation · 2004
- Microelectronic programmable device and methods of forming and programming the same103US 7,405,967 B2Axon Technologies Corporation · 2008
- Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode89US 7,394,680 B2Kabushiki Kaisha Toshiba · 2008
- Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation70US 7,400,522 B2Kabushiki Kaisha Toshiba · 2008