Semiconductor device including resistance change layer and metal particle-embedded metal-organic framework layer and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsWoo Cheol Lee, Won Tae Koo
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Abstract
A semiconductor device according to an embodiment of the present disclosure includes a first electrode, a first resistance change layer disposed on the first electrode, a conduction control layer disposed on the first resistance change layer, a second resistance change layer disposed on the conduction control layer, and a second electrode disposed on the second resistance change layer. The conduction control layer includes a metal-organic framework layer and metal particles embedded in the metal-organic framework layer.
Claims28
A semiconductor device comprising:
- a first electrode;
- a first resistance change layer disposed on the first electrode;
- a conduction control layer disposed on the first resistance change layer and including a metal-organic framework layer and metal particles embedded in the metal-organic framework layer;
- a second resistance change layer disposed on the conduction control layer;
- and
- a second electrode disposed on the second resistance change layer.
A method of manufacturing a semiconductor device, the method comprising:
- providing a substrate;
- forming a first electrode on the substrate;
- forming a first resistance change layer on the first electrode;
- forming, on the first resistance change layer, a conduction control layer including an insulating metal-organic framework layer and metal particles embedded in the metal-organic framework layer;
- forming a second resistance change layer on the conduction control layer;
- and
- forming a second electrode on the second resistance change layer.
A semiconductor device comprising:
- a first conduction line and a second conduction line that are disposed on different planes;
- and
- a pillar structure disposed in a region that the first conduction line and the second conduction line intersect, the pillar structure including a first resistance change layer, a conduction control layer, and a second resistance change layer,
- wherein the conduction control layer includes a metal-organic framework layer and metal particles embedded in the metal-organic framework layer.
Dependencies are inferred from the claim text.