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US 6,825,489 B2Granted
Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same
AssigneeAxon Technologies Corporation
InventorMichael N. Kozicki
Life of this patent
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Abstract
A microelectronic programmable structure suitable for storing information and a method of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
Claims29
An array of programmable memory structures comprising:
- a plurality of first programmable structures suitable for storing information, wherein each first programmable structure comprises a first ion conductor formed of an ion conductive material and conductive ions, a first oxidizable electrode proximate the ion conductor, a first indifferent electrode proximate the ion conductor, and a barrier layer between the first indifferent electrode and the first oxidizable electrode;
- and
- a plurality of second programmable structures suitable for storing information, wherein each second programmable structure comprises a second ion conductor formed of an ion conductive material and conductive ions, a second oxidizable electrode proximate the ion conductor, and a second indifferent electrode proximate the ion conductor.
Dependencies are inferred from the claim text.