US 12,610,752 B2 · Resistive random-access memory devices with a via device structure

Abstract

The present disclosure relates to resistive random-access memory (RRAM) devices. A method for fabricating an RRAM device includes: fabricating a first bottom electrode and a second bottom electrode on a substrate; fabricating a first isolation layer on the substrate, the first bottom electrode, and the second bottom electrode; fabricating a via in the first isolation layer to expose a portion of the first bottom electrode; fabricating a switching oxide layer on the first isolation layer and the exposed portion of the first bottom electrode; and fabricating a filament-forming layer by etching a portion of the switching oxide layer that extends beyond the via. The portion of the switching oxide layer does not contact the exposed portion of the first bottom electrode. A top electrode is fabricated on the filament-forming layer. A top metal interconnect may be fabricated on the top electrode and a second isolation layer.

Claims20

Dependent claims

A resistive random-access memory (RRAM) device, comprising:

a first bottom electrode fabricated on a substrate;
a first isolation layer fabricated on the substrate and the first bottom electrode, wherein the first isolation layer includes a first via, wherein a via bottom of the first via contacts the first bottom electrode;
a filament-forming layer fabricated on the first bottom electrode and the first isolation layer and within the first via, wherein the filament-forming layer comprises at least one switching metal oxide, wherein a first portion of the filament-forming layer is fabricated on a top surface of the first isolation layer and along sidewalls of the first via, wherein a second portion of the filament-forming layer is fabricated within the first via and contacts the first bottom electrode at the via bottom of the first via, and wherein the first portion of the filament-forming layer does not contact the first bottom electrode;
and
a top electrode fabricated on the filament-forming layer.

2 more elements

Dependencies are inferred from the claim text.

Resistive random-access memory devices with a via device structure

Life of this patent

Resistive random-access memory devices with a via device structure

Life of this patent

Abstract

Claims20