G11C 2213/54
Structure including a tunneling barrier layer, the memory effect implying the modification
Official title: Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity
G11C2213/54 (Structure including a tunneling barrier layer, the memory effect implying the modification) appears on 67 US grants and 80 published applications in this corpus.
Search patents in G11C- Granted patents
- 67
- Published applications
- 80
- Assignees
- 41
- Inventors
- 151
- Latest grant
- 12 Aug 2025
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|---|---|---|
| 2006 | 0 | 2 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 1 | 4 |
| 2010 | 0 | 1 |
| 2011 | 2 | 4 |
| 2012 | 3 | 9 |
| 2013 | 6 | 4 |
| 2014 | 5 | 5 |
| 2015 | 7 | 6 |
| 2016 | 2 | 1 |
| 2017 | 5 | 3 |
| 2018 | 3 | 5 |
| 2019 | 6 | 6 |
| 2020 | 5 | 6 |
| 2021 | 5 | 8 |
| 2022 | 5 | 6 |
| 2023 | 4 | 5 |
| 2024 | 3 | 1 |
| 2025 | 5 | 3 |
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Recent patents
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Most cited
By later US patents
- Memory using variable tunnel barrier widths112US 7,538,338 B2Unity Semiconductor Corporation · 2009
- Storage device including a memory cell having multiple memory layers53US 8,098,520 B2Seagate Technology LLC · 2012
- Non-volatile storage system using opposite polarity programming signals for MIM memory cell45US 8,699,259 B2SanDisk 3D LLC · 2014
- Memory using variable tunnel barrier widths32US 7,985,963 B2Unity Semiconductor Corporation · 2011
- Memory cells having ferroelectric materials25US 9,053,801 B2Micron Technology, Inc. · 2015