Non-volatile storage system using opposite polarity programming signals for MIM memory cell

A non-volatile memory cell, comprising:

• a first electrode;
• a second electrode;
• a carbon-based reversible resistivity switching material between the first electrode and the second electrode;
• a metal oxide reversible resistivity switching material between the first electrode and the carbon-based reversible resistivity switching material;
• and
• an additional metal oxide reversible resistivity switching material between the carbon-based reversible resistivity switching material and the second electrode.

A non-volatile memory cell, comprising:

• a first electrode;
• a second electrode comprising a titanium-rich TiN material layer;
• and
• a carbon-nanotube reversible resistivity switching material between the first electrode and the second electrode, and in contact with the first electrode and the second electrode, wherein the carbon nanotube reversible resistivity switching material comprises carbon nanotubes which interface with the second electrode as a bottom electrode using side contact, and interface with the first electrode using end contact.

A non-volatile memory cell, comprising:

• a first electrode;
• a second electrode;
• a carbon-based reversible resistivity switching material between the first electrode and the second electrode;
• a metal oxide reversible resistivity switching material between the first electrode and the carbon-based reversible resistivity switching material;
• and
• an additional carbon-based reversible resistivity switching material between the metal oxide reversible resistivity switching material and the first electrode.