Increasing selector surface area in crossbar array circuits

Abstract

A method for forming a crossbar circuit is provided. The method may include forming a Resistive Random-Access Memory (RRAM) stack on a first line electrode and a substrate, forming an isolation layer on the first line electrode and the RRAM stack, etching the isolation layer to expose a top surface of the RRAM stack, and forming a selector stack on the top surface of the RRAM stack, a sidewall of the isolation layer, and an upper surface of the isolation layer. The method may further include forming a second line electrode on the selector stack.

Dependencies are inferred from the claim text.