G11C 2213/56
Structure including two electrodes, a memory active layer and a so called
Official title: Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
G11C2213/56 (Structure including two electrodes, a memory active layer and a so called) appears on 324 US grants and 351 published applications in this corpus.
Search patents in G11C- Granted patents
- 324
- Published applications
- 351
- Assignees
- 89
- Inventors
- 486
- Latest grant
- 30 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 6 |
| 2004 | 5 | 8 |
| 2005 | 7 | 5 |
| 2006 | 8 | 16 |
| 2007 | 11 | 19 |
| 2008 | 11 | 20 |
| 2009 | 9 | 24 |
| 2010 | 21 | 36 |
| 2011 | 24 | 42 |
| 2012 | 41 | 41 |
| 2013 | 48 | 25 |
| 2014 | 41 | 28 |
| 2015 | 21 | 16 |
| 2016 | 16 | 11 |
| 2017 | 13 | 10 |
| 2018 | 5 | 11 |
| 2019 | 8 | 12 |
| 2020 | 11 | 4 |
| 2021 | 9 | 10 |
| 2022 | 4 | 2 |
| 2023 | 2 | 2 |
| 2024 | 2 | 2 |
| 2025 | 4 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor memory device30 Sep 2025US 12,432,935 B2Samsung Electronics Co., Ltd.
- Ferroelectric components and cross point array devices including the ferroelectric components5 Aug 2025US 12,382,846 B2SK hynix Inc.
- Resistive memory apparatus and operating method thereof and memory cell array thereof29 Jul 2025US 12,374,395 B2Winbond Electronics Corp.
- True random number generator (TRNG) circuit using a diffusive memristor17 Jun 2025US 12,333,275 B2University of Massachusetts
- Thermally sensitive state change ionic redox transistor26 Mar 2024US 11,942,282 B1National Technology & Engineering Solutions of Sandia, LLC
- Method of manufacturing semiconductor memory device including ovonic threshold switch film1 Jan 2026US 2026/0006799 A1Samsung Electronics Co., Ltd.
- Resistive memory apparatus and operating method thereof and memory cell array thereof11 Jul 2024US 2024/0233819 A9Winbond Electronics Corp.
- Resistive memory apparatus and operating method thereof and memory cell array thereof25 Apr 2024US 2024/0135990 A1Winbond Electronics Corp.
- Semiconductor memory device2 Nov 2023US 2023/0354616 A1Samsung Electronics Co., Ltd.
- Ferroelectric components and cross point array devices including the ferroelectric components2 Feb 2023US 2023/0030038 A1SK hynix Inc.
Most cited
By later US patents
- Memory structures and methods of making same269US 6,072,716 AMassachusetts Institute of Technology · 2000
- Memory device134US 6,768,157 B2Advanced Micro Devices, Inc. · 2004
- Memory device with active and passive layers115US 6,858,481 B2Advanced Micro Devices, Inc. · 2005
- Memory device113US 6,864,522 B2Advanced Micro Devices, Inc. · 2005
- Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device106US 8,054,674 B2National Institute of Advanced Industrial Science and Technology · 2011