Memory device
AssigneeAdvanced Micro Devices, Inc.
InventorsJuri H. Krieger, Nikolai Yudanoy
Life of this patent
Estimating the term…
Abstract
A memory storage and retrieval device containing (a) an electrically conductive first electrode; (b) an electrically conductive second electrode; (c) a layer stack intermediate the first and second electrodes containing (d) at least one active layer with variable electrical conductivity; and (e) at least one passive layer containing a source material for varying the electrical conductivity of the at least one active layer upon application of an electrical potential difference between the first and second electrodes.
Claims30
A memory storage and retrieval device, comprising:
- (a) an electrically conductive first electrode;
- (b) an electrically conductive second electrode;
- and
- (c) a layer stack between said first and second electrodes, said layer stack comprising:
- (d) at least one active layer with variable electrical conductivity, said electrical conductivity of said at least one active layer is reversibly upon introduction of charged species thereinto and removed of said charged species therefrom;
- and
- (e) at least one passive layer comprised of a source material for varying said electrical conductivity of said at least one active layer upon application of an electrical potential difference between said first and second electrically conductive electrodes, said at least one passive layer is comprised of said source material for reversibly donating said charged species to and accepting said charged species from said active layer.
A memory storage and retrieval device, comprising:
- (a) an electrically conductive first electrode;
- (b) an electrically conductive second electrode;
- and
- (c) a layer stack between said first and second electrodes, said layer stack comprising:
- (d) at least one active layer with variable electrical conductivity, said electrical conductivity of said at least one active layer is reversibly varied upon introduction of charged species thereinto and removed of said charged species therefrom;
- and
- (e) at least one passive layer comprised of a source material for varying said electrical conductivity of said at least one active layer upon application of an electrical potential difference between said first and second electrically conductive electrodes, said at least one passive layer is comprised of said source material for reversibly donating said charged species to and accepting said charged species from said active layer, said source material comprises at least one super-ionic conductor material or intercalation compound.
A memory storage and retrieval device, comprising:
- (a) an electrically conductive first electrode;
- (b) an electrically conductive second electrode;
- and
- (c) a layer stack between said first and second electrodes, said layer stack comprising:
- (d) at least one active layer with variable electrical conductivity, said electrical conductivity of said at least one active layer is reversibly varied upon introduction of charged species thereinto and removed of said charged species therefrom;
- and
- (e) at least one passive layer comprised of at least one super-ionic conductor material or intercalation compound for varying said electrical conductivity of said at least one active layer upon application of an electrical potential difference between said first and second electrically conductive electrodes, said at least one passive layer is comprised of said at least one super-ionic conductor material or intercalation compound for reversibly donating said charged species to and accepting said charged species from said active layer, said at least one passive layer has a thickness from about 20 to about 100 Å.
Dependencies are inferred from the claim text.