Method of manufacturing semiconductor memory device including ovonic threshold switch film
AssigneeSamsung Electronics Co., Ltd.
InventorsJong Hyun PAEK, Woo Jun JEONG, Seul Ji SONG
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Abstract
A method of manufacturing a semiconductor memory device includes forming a first conductive line extending in a first direction on a substrate, forming a second conductive line extending in a second direction on the first conductive line, and forming a first memory cell between the first conductive line and the second conductive line by sequentially stacking a first electrode, a first high-concentration electrode, a first ovonic threshold switch (OTS) film, and a second electrode, wherein a concentration of nitrogen (N) contained in the first high-concentration electrode is greater than a concentration of nitrogen (N) contained in the first electrode.
Claims20
A method of manufacturing a semiconductor memory device, comprising:
- forming a first conductive line extending in a first direction on a substrate;
- forming a second conductive line extending in a second direction on the first conductive line;
- and
- forming a first memory cell between the first conductive line and the second conductive line by sequentially stacking a first electrode, a first high-concentration electrode, a first ovonic threshold switch (OTS) film, and a second electrode,
- wherein a concentration of nitrogen (N) contained in the first high-concentration electrode is greater than a concentration of nitrogen (N) contained in the first electrode.
A method of manufacturing a semiconductor memory device, comprising:
- forming a first conductive line in a first direction on a substrate;
- forming a second conductive line in a second direction on the first conductive line;
- forming a first memory cell on the second conductive line by sequentially stacking a first electrode, a first OTS film, a first high-concentration electrode, and a second electrode;
- and
- forming a third conductive line extending in the first direction on the first memory cell,
- wherein a dimension of the second electrode gradually decreases as the second electrode extends away from the substrate and wherein a dimension of the first OTS film gradually increases as the first OTS film extends away from the substrate.
A method of manufacturing a semiconductor memory device, comprising:
- forming a first conductive line extending in a first direction on a substrate;
- forming a second conductive line extending in a second direction intersecting the first direction on the first conductive line;
- and
- forming a first memory cell at an intersection of the first conductive line and the second conductive line by stacking a first electrode, a first OTS film, and a second electrode between the first conductive line and the second conductive line,
- wherein the first OTS film includes a chalcogenide material and wherein a logic state of data stored in the first OTS film is based on a concentration of ions at a surface of the first OTS film.
Dependencies are inferred from the claim text.