G11C 2213/52
Structure characterized by the electrode material, shape, etc
Official title: Structure characterized by the electrode material, shape, etc.
G11C2213/52 (Structure characterized by the electrode material, shape, etc) appears on 438 US grants and 452 published applications in this corpus.
Search patents in G11C- Granted patents
- 438
- Published applications
- 452
- Assignees
- 133
- Inventors
- 742
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 0 |
| 2002 | 2 | 3 |
| 2003 | 0 | 6 |
| 2004 | 5 | 8 |
| 2005 | 7 | 10 |
| 2006 | 5 | 10 |
| 2007 | 5 | 11 |
| 2008 | 7 | 15 |
| 2009 | 7 | 11 |
| 2010 | 16 | 16 |
| 2011 | 11 | 12 |
| 2012 | 18 | 19 |
| 2013 | 12 | 19 |
| 2014 | 25 | 23 |
| 2015 | 24 | 20 |
| 2016 | 20 | 20 |
| 2017 | 28 | 25 |
| 2018 | 17 | 31 |
| 2019 | 37 | 55 |
| 2020 | 48 | 46 |
| 2021 | 50 | 37 |
| 2022 | 26 | 25 |
| 2023 | 17 | 10 |
| 2024 | 21 | 8 |
| 2025 | 13 | 7 |
| 2026 | 8 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Bottom electrode structure in memory device11 Aug 2026US 12,707,901 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Heat dissipation in resistive memories11 Aug 2026US 12,707,903 B2Virginia Tech Intellectual Properties, Inc.
- Temporal kernel devices, temporal kernel computing systems, and methods of their operation16 Jun 2026US 12,660,205 B2Seoul National University R&Db Foundation
- Resistive random-access memory devices with a via device structure21 Apr 2026US 12,610,752 B2TetraMem Inc.
- Socket design for a memory device10 Feb 2026US 12,548,621 B2Micron Technology, Inc.
- Socket design for a memory device4 Jun 2026US 2026/0155173 A1Micron Technology, Inc.
- Rram structure and method of fabricating the same2 Apr 2026US 2026/0096356 A1United Microelectronics Corp.
- Resistive random-access memory devices with engineered electronic defects and methods for making the same19 Mar 2026US 2026/0082824 A1TetraMem Inc.
- Resistive random-access memory devices with multi-component electrodes and discontinuous interface layers8 Jan 2026US 2026/0013406 A1TetraMem Inc.
- Method of manufacturing semiconductor memory device including ovonic threshold switch film1 Jan 2026US 2026/0006799 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Chalcogenide memory cell with a plurality of chalcogenide electrodes671US 5,920,788 AMicron Technology, Inc. · 1999
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Chalcogenide memory cell with a plurality of chalcogenide electrodes360US 5,789,758 AMicron Technology, Inc. · 1998
- Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same284US 6,150,253 AMicron Technology, Inc. · 2000