G11C 2213/30
Resistive cell, memory material aspects
G11C2213/30 (Resistive cell, memory material aspects) appears on 1,463 US grants and 1,579 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,463
- Published applications
- 1,579
- Assignees
- 242
- Inventors
- 1,633
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 0 | 0 |
| 2000 | 4 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 1 |
| 2003 | 10 | 23 |
| 2004 | 23 | 73 |
| 2005 | 48 | 67 |
| 2006 | 52 | 58 |
| 2007 | 33 | 64 |
| 2008 | 59 | 129 |
| 2009 | 53 | 120 |
| 2010 | 91 | 162 |
| 2011 | 141 | 128 |
| 2012 | 130 | 91 |
| 2013 | 126 | 82 |
| 2014 | 102 | 71 |
| 2015 | 79 | 55 |
| 2016 | 67 | 45 |
| 2017 | 52 | 53 |
| 2018 | 50 | 54 |
| 2019 | 71 | 101 |
| 2020 | 82 | 66 |
| 2021 | 63 | 42 |
| 2022 | 37 | 33 |
| 2023 | 22 | 24 |
| 2024 | 23 | 17 |
| 2025 | 19 | 10 |
| 2026 | 8 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 2213/32Material having simple binary metal oxide structureIndexing code672
- G11C 2213/31Material having complex metal oxideIndexing code595
- G11C 2213/34Material includes an oxide or a nitrideIndexing code272
- G11C 2213/33Material including siliconIndexing code191
- G11C 2213/35Material including carbonIndexing code191
Recent patents
- Resistive memory device18 Aug 2026US 12,713,621 B2Samsung Electronics Co., Ltd.
- Temporal kernel devices, temporal kernel computing systems, and methods of their operation16 Jun 2026US 12,660,205 B2Seoul National University R&Db Foundation
- Resistive switching in a RRAM device9 Jun 2026US 12,652,970 B2New Jersey Institute of Technology
- Resistance change element, storage device, and neural network apparatus28 Apr 2026US 12,614,587 B2Kabushiki Kaisha Toshiba
- Resistive random-access memory devices with a via device structure21 Apr 2026US 12,610,752 B2TetraMem Inc.
- In-memory acceleration using 6t-rrams with signed weight values13 Aug 2026US 2026/0237431 A1Government of the United States as Represented by the Secretary of the Air Force
- Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device25 Jun 2026US 2026/0181912 A1Samsung Electronics Co., Ltd.
- Rram device as physical unclonable function device and manufacturing method18 Jun 2026US 2026/0171150 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Programming of the High Resistive State of a Resistive Memory Element26 Mar 2026US 2026/0088086 A1Weebit Nano Ltd.
- Resistive random-access memory devices with engineered electronic defects and methods for making the same19 Mar 2026US 2026/0082824 A1TetraMem Inc.
Most cited
By later US patents
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Composite memory material comprising a mixture of phase-change memory material and dielectric material389US 5,825,046 AEnergy Conversion Devices, Inc. · 1998
- Electrically variable multi-state resistance computing375US 6,473,332 B1University of Houston System · 2002
- Programmable cell for use in programmable electronic arrays343US 4,599,705 AEnergy Conversion Devices, Inc. · 1986
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011