G11C 2213/31
Material having complex metal oxide
Official title: Material having complex metal oxide, e.g. perovskite structure
G11C2213/31 (Material having complex metal oxide) appears on 595 US grants and 656 published applications in this corpus.
Search patents in G11C- Granted patents
- 595
- Published applications
- 656
- Assignees
- 99
- Inventors
- 635
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 0 |
| 2003 | 8 | 13 |
| 2004 | 19 | 65 |
| 2005 | 43 | 52 |
| 2006 | 45 | 40 |
| 2007 | 23 | 40 |
| 2008 | 41 | 70 |
| 2009 | 35 | 55 |
| 2010 | 38 | 59 |
| 2011 | 72 | 49 |
| 2012 | 46 | 27 |
| 2013 | 37 | 13 |
| 2014 | 19 | 9 |
| 2015 | 11 | 10 |
| 2016 | 13 | 11 |
| 2017 | 15 | 15 |
| 2018 | 12 | 17 |
| 2019 | 27 | 43 |
| 2020 | 32 | 22 |
| 2021 | 21 | 16 |
| 2022 | 11 | 8 |
| 2023 | 6 | 8 |
| 2024 | 7 | 6 |
| 2025 | 7 | 6 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Resistance change element, storage device, and neural network apparatus28 Apr 2026US 12,614,587 B2Kabushiki Kaisha Toshiba
- Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device24 Mar 2026US 12,588,218 B2Samsung Electronics Co., Ltd.
- Programmable resistive memory element and a method of making the same7 Oct 2025US 12,437,809 B2Cyberswarm, Inc.
- Apparatus and method for generating hardware-based physical unclonable functions and their use7 Oct 2025US 12,438,104 B2Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e. V.
- Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells2 Sep 2025US 12,406,919 B2Micron Technology, Inc.
- Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device25 Jun 2026US 2026/0181912 A1Samsung Electronics Co., Ltd.
- Programmable resistive memory element and a method of making the same8 Jan 2026US 2026/0011367 A1Cyberswarm, Inc.
- Method of operating memory cell28 Aug 2025US 2025/0273267 A1National Taiwan Normal University
- Resistive Switching Devices and Methods for their Manufacture and Operation29 May 2025US 2025/0176446 A1
- Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells10 Apr 2025US 2025/0118653 A1Micron Technology, Inc.
Most cited
By later US patents
- Electrically variable multi-state resistance computing375US 6,473,332 B1University of Houston System · 2002
- Cross point memory array using multiple thin films260US 6,753,561 B1Unity Semiconductor Corporation · 2004
- Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states260US 7,586,778 B2Macronix International Co., Ltd. · 2009
- Method for switching the properties of perovskite materials used in thin film resistors247US 6,204,139 B1University of Houston · 2001
- Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same235US 7,843,718 B2Samsung Electronics Co., Ltd. · 2010