Resistive Switching Devices and Methods for their Manufacture and Operation

Abstract

A resistive switching memory device comprises an active layer comprising an ionic conducting material. The active layer is disposed on a substrate. The device further comprises: a first electrode, a second electrode and optionally a first semiconductor layer. One of the first electrode, second electrode and first semiconductor layer, when present, is the substrate for the active layer and wherein the active layer and the first semiconductor layer, when present, contact each other at an interface. The device exhibits hysteretic I-V behaviour to permit switching of the electrical resistance of the device between different resistance states. The active layer is non-epitaxial with respect to the substrate.

Dependencies are inferred from the claim text.