G11C 2213/35
Material including carbon
Official title: Material including carbon, e.g. graphite, grapheme
G11C2213/35 (Material including carbon) appears on 191 US grants and 218 published applications in this corpus.
Search patents in G11C- Granted patents
- 191
- Published applications
- 218
- Assignees
- 59
- Inventors
- 345
- Latest grant
- 10 Feb 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 5 |
| 2004 | 3 | 4 |
| 2005 | 2 | 0 |
| 2006 | 2 | 3 |
| 2007 | 1 | 2 |
| 2008 | 0 | 7 |
| 2009 | 4 | 13 |
| 2010 | 9 | 25 |
| 2011 | 6 | 13 |
| 2012 | 10 | 16 |
| 2013 | 17 | 17 |
| 2014 | 21 | 13 |
| 2015 | 14 | 10 |
| 2016 | 19 | 13 |
| 2017 | 11 | 15 |
| 2018 | 8 | 9 |
| 2019 | 12 | 17 |
| 2020 | 14 | 13 |
| 2021 | 11 | 7 |
| 2022 | 8 | 7 |
| 2023 | 5 | 4 |
| 2024 | 6 | 3 |
| 2025 | 3 | 1 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Self-healing memory device and method of manufacturing the same10 Feb 2026US 12,550,634 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Semiconductor memory device30 Sep 2025US 12,432,935 B2Samsung Electronics Co., Ltd.
- Memristor having metal/ion channels formed in insulating layer and resistive switching memory device including the same19 Aug 2025US 12,396,378 B2Research & Business Foundation Sungkyunkwan University
- Variable resistance memory device1 Apr 2025US 12,268,042 B2Samsung Electronics Co., Ltd.
- Resistive change element arrays24 Dec 2024US 12,176,028 B2Nantero, Inc.
- Method of manufacturing semiconductor memory device including ovonic threshold switch film1 Jan 2026US 2026/0006799 A1Samsung Electronics Co., Ltd.
- Variable resistance memory device19 Jun 2025US 2025/0204138 A1Samsung Electronics Co., Ltd.
- Evaluation of background leakage to select write voltage in memory devices3 Oct 2024US 2024/0331781 A1Micron Technology, Inc.
- 3d memory with graphite conductive strips19 Sep 2024US 2024/0315033 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Resistive Change Element Arrays1 Feb 2024US 2024/0038299 A1Nantero, Inc.
Most cited
By later US patents
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Composite memory material comprising a mixture of phase-change memory material and dielectric material389US 5,825,046 AEnergy Conversion Devices, Inc. · 1998
- Programmable cell for use in programmable electronic arrays343US 4,599,705 AEnergy Conversion Devices, Inc. · 1986
- All graphene flash memory device281US 8,772,853 B2The Regents of the University of California · 2014
- Memory structures and methods of making same269US 6,072,716 AMassachusetts Institute of Technology · 2000