US 2024/0315033 A1 · 3D MEMORY WITH GRAPHITE CONDUCTIVE STRIPS

Abstract

A process of forming a three-dimensional (3D) memory array includes forming a stack having a plurality of conductive layers of carbon-based material separated by dielectric layers. Etching trenches in the stack divides the conductive layers into conductive strips. The resulting structure includes a two-dimensional array of horizontal conductive strips. Memory cells may be distributed along the length of each strip to provide a 3D array. The conductive strips together with additional conductive structure that may have a vertical or horizontal orientation allow the memory cells to be addressed individually. Forming the conductive layers with carbon-based material facilitate etching the trenches to a high aspect ratio. Accordingly, forming the conductive layers of carbon-based material enables the memory array to have more layers or to have a higher area density.

Claims20

Dependent claims

A method of forming a memory device, the method comprising:

forming a stack comprising carbon-based material layers interleaved with dielectric layers, wherein one of the carbon-based material layers is lowermost;
etching trenches in the stack;
depositing a data storage structure and a semiconductor film within the trenches;
filling the trenches with a second dielectric;
forming a mask and using the mask to etch holes in the trenches, wherein the holes extend to a depth of the lowermost of the carbon-based material layers;
and
filling the holes to provide vertical conductive columns within the trenches, wherein the vertical conductive columns provide source lines and drain lines and the carbon-based material layers provide word lines for memory cells.

4 more elements

Dependencies are inferred from the claim text.

3d memory with graphite conductive strips

Life of this patent

3d memory with graphite conductive strips

Life of this patent

Abstract

Claims20