Memristor having metal/ion channels formed in insulating layer and resistive switching memory device including the same

A resistive switching memory device comprising:

• a first signal line and a second signal line disposed in different layers and intersecting with each other;
• and
• a memory cell and a selector element disposed between the first signal line and the second signal line and in an intersection area between the first signal line and the second signal line, wherein the memory cell and the selector element are connected to the first signal line and the second signal line, and are connected in series to each other,
• wherein the memory cell includes:
• a first electrode electrically connected to one of the first signal line and the second signal line;
• a second electrode electrically connected to the selector element;
• and
• a resistive switching layer disposed between the first electrode and the second electrode,
• wherein the resistive switching layer includes:
• a porous insulating layer having through-channel holes defined therein extending from a bottom face to a top face thereof;
• and
• conductive filaments respectively formed inside the through-channel holes,
• wherein the memory cell further includes a first graphene layer disposed between the first electrode and the resistive switching layer, wherein the first graphene layer has through-holes defined therein communicating with the through-channel holes, respectively, and has electrical conductivity.