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US 12,652,970 B2Granted
Resistive switching in a RRAM device
AssigneeNew Jersey Institute of Technology
InventorsHieu Nguyen, Ravi Teja Velpula, Barsha Jain
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Abstract
A resistive random access memory (RRAM) device is provided, and includes a top electrode layer, a bottom electrode layer, and an insulating layer positioned between the top electrode layer and the bottom electrode layer. The insulating layer includes a SiNx layer.
Claims18
A resistive random access memory (RRAM) device, comprising:
- a top electrode layer;
- a bottom electrode layer;
- and
- an insulating layer positioned between the top electrode layer and the bottom electrode layer, the insulating layer including a SiNx layer;
- wherein the insulating layer comprises a SiO2 layer positioned below the SiNx layer.
2 more elements
A switching device, comprising:
- a top electrode layer;
- a bottom electrode layer;
- and
- a resistive switching bilayer positioned between the top electrode layer and the bottom electrode layer;
- wherein the resistive switching bilayer includes SiNx/SiO2.
2 more elements
A method of operating a resistive random access memory (RRAM) device, comprising:
- applying an external voltage to the RRAM device, the RRAM device including (i) a top electrode layer, (ii) a bottom electrode layer, and (iii) an insulating layer positioned between the top electrode layer and the bottom electrode layer, the insulating layer including a SiNx layer and the insulating layer comprises a SiO2 layer positioned below the SiNx layer;
- wherein application of the external voltage to the RRAM device changes the resistance across the insulating layer.
Dependencies are inferred from the claim text.