G11C 2213/33
Material including silicon
G11C2213/33 (Material including silicon) appears on 191 US grants and 192 published applications in this corpus.
Search patents in G11C- Granted patents
- 191
- Published applications
- 192
- Assignees
- 64
- Inventors
- 283
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 1 |
| 2004 | 1 | 0 |
| 2005 | 0 | 3 |
| 2006 | 0 | 4 |
| 2007 | 1 | 4 |
| 2008 | 6 | 11 |
| 2009 | 1 | 5 |
| 2010 | 11 | 13 |
| 2011 | 9 | 18 |
| 2012 | 13 | 17 |
| 2013 | 17 | 17 |
| 2014 | 19 | 16 |
| 2015 | 24 | 15 |
| 2016 | 14 | 12 |
| 2017 | 16 | 14 |
| 2018 | 16 | 6 |
| 2019 | 8 | 12 |
| 2020 | 7 | 10 |
| 2021 | 8 | 3 |
| 2022 | 5 | 5 |
| 2023 | 2 | 3 |
| 2024 | 3 | 1 |
| 2025 | 0 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Resistive switching in a RRAM device9 Jun 2026US 12,652,970 B2New Jersey Institute of Technology
- Method for manufacturing memory system including a storage device19 Nov 2024US 12,148,469 B2Kioxia Corporation
- Memory device, memory system, and method of manufacturing memory device25 Jun 2024US 12,020,737 B2Kioxia Corporation
- Resistive random access memory device with three-dimensional cross-point structure and method of operating the same30 Apr 2024US 11,972,796 B2Kioxia Corporation
- Techniques for programming a memory cell14 Nov 2023US 11,817,148 B2Micron Technology, Inc.
- Resistive Switching Devices and Methods for their Manufacture and Operation29 May 2025US 2025/0176446 A1
- Resistive Switching in a RRAM Device28 Mar 2024US 2024/0107904 A1New Jersey Institute of Technology
- Method for manufacturing memory system6 Apr 2023US 2023/0106886 A1Kioxia Corporation
- Cbram bottom electrode structures23 Mar 2023US 2023/0086109 A1Dialog Semiconductor US Inc.
- Resistive random access memory device with three-dimensional cross-point structure and method of operating the same26 Jan 2023US 2023/0024213 A1Kioxia Corporation
Most cited
By later US patents
- Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide180US 7,176,064 B2SanDisk 3D LLC · 2007
- Thin film memory matrix using amorphous and high resistive layers131US 4,876,668 ACalifornia Institute of Technology · 1989
- Semiconductor memory device and write-once, read-only semiconductor memory array using amorphous-silicon and method therefor121US 5,457,649 AMicrochip Technology Incorporated · 1995
- Switchable resistive memory with opposite polarity write pulses121US 7,426,128 B2SanDisk 3D LLC · 2008
- Cross point memory cell with distributed diodes and method of making same100US 7,733,685 B2SanDisk 3D LLC · 2010