Memory device, memory system, and method of manufacturing memory device
AssigneeKioxia Corporation
InventorHisanori Aikawa
Life of this patent
Estimating the term…
Abstract
A memory device includes a memory cell array, first and second memory cells, first and second read circuits, and first and second write circuits. The memory cell array includes first and second sub-arrays. The first memory cells are included in each of the first sub-arrays. The second memory cells are included in each of the second sub-arrays. The first and second read circuits are provided for reading data of the first and second memory cells, respectively. The first and second write circuits are provided for writing data to the first and second memory cells, respectively. An area of the first sub-array is different from an area of the second sub-array.
Claims19
A memory device comprising:
- a memory cell array including a plurality of first sub-arrays and a plurality of second sub-arrays;
- a plurality of first memory cells included in each of the plurality of first sub-arrays;
- a plurality of second memory cells included in each of the plurality of second sub-arrays;
- a first read circuit for reading data of the plurality of first memory cells;
- a second read circuit for reading data of the plurality of second memory cells, the second read circuit differing from the first read circuit;
- a first write circuit for writing data to the plurality of first memory cells;
- and
- a second write circuit for writing data to the plurality of second memory cells, the second write circuit differing from the first write circuit,
- wherein an area of the first sub-array is different from an area of the second sub-array, and
- wherein a storage capacity of the second sub-array is larger than a storage capacity of the first sub-array.
A method of manufacturing a memory device, the method comprising:
- forming a silicon oxide film in a first region and a second region;
- injecting arsenic into the silicon oxide film;
- forming a mask on the silicon oxide film injected with arsenic, the mask covering the second region, and a portion of the mask corresponding to the first region being opened;
- injecting arsenic into the silicon oxide film in the first region using the mask;
- and
- removing the mask after injecting arsenic into the silicon oxide film in the first region, and dividing the silicon oxide film for each of at least one memory cell.
A method of manufacturing a memory device, the method comprising:
- forming a silicon oxide film in a first region and a second region;
- forming a mask on the silicon oxide film, the mask covering the second region, and a portion of the mask corresponding to the first region being opened;
- etching at least a part of the silicon oxide film in the first region using the mask;
- removing the mask after the etching;
- injecting arsenic into the silicon oxide film after removing the mask;
- and
- dividing the silicon oxide film for each of at least one memory cell after injecting arsenic into the silicon oxide film.
Dependencies are inferred from the claim text.