Method for manufacturing memory system including a storage device

A method for manufacturing a memory system, the method comprising:

• forming a plurality of semiconductor storage devices on a substrate, each semiconductor storage device including:
• a first wiring extending in a first direction;
• a second wiring extending in a second direction intersecting with the first direction;
• and
• a memory cell including a variable resistance element and a switching element connected between the first wiring and the second wiring;
• placing the variable resistance elements of the plurality of storage devices into a low resistance state by performing an initialization process on the variable resistance elements before dicing the substrate into individual semiconductor storage devices.

A method of manufacturing memory devices, the method comprising:

• forming a plurality of memory cells in a plurality of dies on a semiconductor wafer, the memory cells including a magnetoresistance effect element and a switching element connected in series, the switching element requiring a forming voltage to be applied thereto before reading and writing operations are performed on the memory cell;
• exposing the semiconductor wafer to an external magnetic field to place the magnetoresistance effect elements in a low resistance state;
• applying the forming voltage to the switching elements after the exposing of the semiconductor wafer to the external magnetic field;
• and
• dicing the semiconductor wafer to separate individual memory devices from one another.