Cbram bottom electrode structures

A method of forming bottom electrodes in a resistive memory device, the method comprising:

• a) depositing a bottom insulator on a substrate interlayer dielectric (ILD);
• b) forming vias in the substrate ILD by patterning and etching holes in the bottom insulator and the substrate ILD;
• c) filling the holes with a via metal to form a flat via surface;
• d) depositing a bottom electrode thin film and a top insulator;
• e) defining the bottom electrode;
• f) etching the top insulator, the bottom electrode thin film, and the bottom insulator;
• g) depositing a cell plate layer having a switching layer, an anode layer, and a cap layer;
• h) patterning the cell plate layer by depositing and patterning a cell plate hard mask layer, and then etching the cell plate layer;
• i) encapsulating the cell plate layer;
• and
• j) forming electrical contact to the cell plate layer.