G11C 2213/34
Material includes an oxide or a nitride
G11C2213/34 (Material includes an oxide or a nitride) appears on 272 US grants and 293 published applications in this corpus.
Search patents in G11C- Granted patents
- 272
- Published applications
- 293
- Assignees
- 81
- Inventors
- 447
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 3 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 9 |
| 2004 | 3 | 7 |
| 2005 | 4 | 13 |
| 2006 | 8 | 10 |
| 2007 | 8 | 10 |
| 2008 | 15 | 24 |
| 2009 | 11 | 27 |
| 2010 | 22 | 62 |
| 2011 | 30 | 31 |
| 2012 | 44 | 15 |
| 2013 | 32 | 11 |
| 2014 | 15 | 12 |
| 2015 | 12 | 9 |
| 2016 | 10 | 7 |
| 2017 | 7 | 9 |
| 2018 | 13 | 10 |
| 2019 | 6 | 12 |
| 2020 | 9 | 3 |
| 2021 | 6 | 4 |
| 2022 | 3 | 1 |
| 2023 | 1 | 3 |
| 2024 | 2 | 3 |
| 2025 | 2 | 0 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Resistive switching in a RRAM device9 Jun 2026US 12,652,970 B2New Jersey Institute of Technology
- Structures for three-terminal memory cells12 Aug 2025US 12,387,785 B2Globalfoundries Singapore Pte. Ltd.
- Semiconductor device including resistance change layer and metal particle-embedded metal-organic framework layer and method of manufacturing the same10 Jun 2025US 12,329,047 B2SK hynix Inc.
- Resistive random access memory device with three-dimensional cross-point structure and method of operating the same30 Apr 2024US 11,972,796 B2Kioxia Corporation
- Variable resistance non-volatile memory element and variable resistance non-volatile memory device using the element30 Jan 2024US 11,889,776 B2Nuvoton Technology Corporation Japan
- Programming of the High Resistive State of a Resistive Memory Element26 Mar 2026US 2026/0088086 A1Weebit Nano Ltd.
- Structures for three-terminal memory cells13 Jun 2024US 2024/0194255 A1Globalfoundries Singapore Pte. Ltd.
- Resistive Switching in a RRAM Device28 Mar 2024US 2024/0107904 A1New Jersey Institute of Technology
- Atomically tuned ultrathin memristors29 Feb 2024US 2024/0074332 A1University of Kansas
- Semiconductor device including resistance change layer and metal particle-embedded metal-organic framework layer and method of manufacturing the same14 Sep 2023US 2023/0292636 A1SK hynix Inc.
Most cited
By later US patents
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Molecular-wire crossbar interconnect (MWCI) for signal routing and communications278US 6,314,019 B1Hewlett-Packard Company · 2001
- Microelectrochemical devices based on inorganic redox active material and method for sensing266US 4,936,956 AMassachusetts Institute of Technology · 1990
- Ion conductor material193US 4,419,421 AMax-Planck-Gesellschaft Zur FöRderung Der Wissenschaften E. V. · 1983
- Programmable structure, an array including the structure, and methods of forming the same155US 7,169,635 B2Axon Technologies Corporation · 2007