Atomically tuned ultrathin memristors

Abstract

Memristors are provided, which, in embodiments, comprise a bottom electrode; a top electrode in electrical communication with the bottom electrode, wherein one or both of the bottom and top electrodes is a Schottky electrode; and a dielectric stack between the bottom and top electrodes, the dielectric stack forming a top interface with a bottom surface of the top electrode and a bottom interface with a top surface of the bottom electrode, the dielectric stack comprising a plurality of atomic layer deposition (ALD)-grown atomic sublayers, the plurality comprising an ALD-grown atomic sublayer of a first metal oxide and an ALD-grown atomic sublayer of a second metal oxide. The second metal oxide is different from the first metal oxide and has a greater concentration of oxygen vacancies (VO) than the first metal oxide. The dielectric stack has a thickness of no more than about 5 nm.

Dependencies are inferred from the claim text.