Programming of the High Resistive State of a Resistive Memory Element

A method of programming a high resistive state of a memory element part of a resistive random access memory, the random access memory being configured to program a low resistive state of the memory element by running a nominal programming current in a first direction through the memory element, the method comprising:

• an initial step of writing the high resistive state of the memory element, consisting in running a reset current through the memory element in a second direction, opposite to the first direction;
• and
• a reconditioning step following the initial step of writing the high resistive state, the reconditioning step comprising at least one cycle of operations comprising, in this order:
• a reconditioning set operation that consists in running a reconditioning set current in the first direction through the memory element, the reconditioning set current having an absolute value lower than the nominal programming current;
• and
• a reconditioning reset operation that consists in running a reconditioning reset current in the second direction through the memory element,
• wherein the reconditioning step increases the resistive value of the memory element obtained by the initial step of writing the high resistive state.