G11C 2213/32
Material having simple binary metal oxide structure
G11C2213/32 (Material having simple binary metal oxide structure) appears on 672 US grants and 731 published applications in this corpus.
Search patents in G11C- Granted patents
- 672
- Published applications
- 731
- Assignees
- 117
- Inventors
- 879
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 0 | 1 |
| 2005 | 1 | 5 |
| 2006 | 1 | 12 |
| 2007 | 3 | 27 |
| 2008 | 20 | 76 |
| 2009 | 24 | 76 |
| 2010 | 52 | 91 |
| 2011 | 86 | 62 |
| 2012 | 76 | 48 |
| 2013 | 72 | 45 |
| 2014 | 54 | 39 |
| 2015 | 37 | 27 |
| 2016 | 33 | 24 |
| 2017 | 26 | 25 |
| 2018 | 26 | 32 |
| 2019 | 37 | 48 |
| 2020 | 47 | 38 |
| 2021 | 29 | 17 |
| 2022 | 15 | 15 |
| 2023 | 10 | 10 |
| 2024 | 10 | 4 |
| 2025 | 9 | 5 |
| 2026 | 4 | 4 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Resistive memory device18 Aug 2026US 12,713,621 B2Samsung Electronics Co., Ltd.
- Temporal kernel devices, temporal kernel computing systems, and methods of their operation16 Jun 2026US 12,660,205 B2Seoul National University R&Db Foundation
- Resistive random-access memory devices with a via device structure21 Apr 2026US 12,610,752 B2TetraMem Inc.
- RRAM device as physical unclonable function device and manufacturing method3 Mar 2026US 12,567,462 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Systems for near-sensor analogue computing for ultrafast responsive tactile sensing11 Nov 2025US 12,469,532 B2Nanyang Technological University
- In-memory acceleration using 6t-rrams with signed weight values13 Aug 2026US 2026/0237431 A1Government of the United States as Represented by the Secretary of the Air Force
- Rram device as physical unclonable function device and manufacturing method18 Jun 2026US 2026/0171150 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Resistive random-access memory devices with engineered electronic defects and methods for making the same19 Mar 2026US 2026/0082824 A1TetraMem Inc.
- Resistive random-access memory devices with multi-component electrodes and discontinuous interface layers8 Jan 2026US 2026/0013406 A1TetraMem Inc.
- Memory cell array circuit and method of forming the same18 Sep 2025US 2025/0291992 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states260US 7,586,778 B2Macronix International Co., Ltd. · 2009
- Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same235US 7,843,718 B2Samsung Electronics Co., Ltd. · 2010
- Non-volatile resistance switching memories and methods of making same229US 7,778,063 B2Symetrix Corporation · 2010
- Nonvolatile semiconductor memory device and data erase/write method thereof218US 7,742,331 B2Kabushiki Kaisha Toshiba · 2010