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US 12,567,462 B2Granted
RRAM device as physical unclonable function device and manufacturing method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChung-Liang Cheng
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Abstract
A resistive random access memory array includes a plurality of memory cells. Each memory cell includes a gate all around transistor and a resistor device. The resistor device includes a first electrode including a plurality of conductive nanosheets. The resistor device includes a high-K resistive element surrounds the conductive nanosheets. The resistor device includes a second electrode separated from the conductive nanosheets by the resistive element. The resistive random access memory array is used to generate physical unclonable function data.
Claims20
A method, comprising:
- receiving, with an electronic device including an integrated circuit, an authentication request;
- interrogating a resistive random access memory array of the integrated circuit responsive to the authentication request;
- providing, from the resistive random access memory array, a plurality of signals responsive to the interrogating;
- generating, based on the signals, physical unclonable function data;
- and
- outputting, responsive to the authentication request, the physical unclonable function data, wherein the resistive random access memory array includes a plurality of resistive random access memory cells, each resistive random access memory cell including:
- a gate all around transistor including a plurality of stacked semiconductor nanosheets corresponding to channels of the gate all around transistor and a gate metal wrapped around the semiconductor nanosheets;
- and
- a resistor device coupled to the gate all around transistor and configured to store a data value of the resistive random access memory cell and including:
- a first electrode including a plurality of stacked metal nanosheets;
- a resistive element wrapped around each of the metal nanosheets;
- and
- a second electrode including the gate metal wrapped around the metal nanosheets and separated from the metal nanosheets by the resistive element, wherein generating the physical unclonable function data includes generating the physical unclonable function data based on currents flowing through the metal nanosheets and resistive elements of the random access memory cells.
10 more elements
An electronic device, comprising:
- a resistive random access memory array including a plurality of resistive random access memory cells each having:
- a gate all around transistor including a plurality of stacked semiconductor nanosheets corresponding to channels of the gate all around transistor and a gate metal wrapped around the semiconductor nanosheets;
- and
- a resistor device coupled to the gate all around transistor and configured to store a data value and including:
- a first electrode including a plurality of stacked metal nanosheets;
- a resistive element wrapped around the metal nanosheets;
- and
- a second electrode separated from the metal nanosheets by the resistive element;
- and
- a memory controller configured to interrogate the resistive random access memory array responsive to an authentication request, to receive signals from the resistive random access memory array responsive to the interrogation, and generate physical unclonable function data from the signals based on currents flowing through the metal nanosheets and resistive elements of the random access memory cells.
7 more elements
A non-transitory computer readable medium storing instructions that, when executed, by one or more processors cause the processors to perform a method, comprising:
- receiving, with an electronic device including an integrated circuit, an authentication request;
- interrogating a resistive random access memory array of the integrated circuit responsive to the authentication request;
- providing, from the resistive random access memory array, a plurality of signals responsive to the interrogating;
- generating, based on the signals, physical unclonable function data;
- and
- outputting, responsive to the authentication request, the physical unclonable function data, wherein the resistive random access memory array includes a plurality of resistive random access memory cells, each resistive random access memory cell including:
- a gate all around transistor including a plurality of stacked semiconductor nanosheets corresponding to channels of the gate all around transistor and a gate metal wrapped around the semiconductor nanosheets;
- and
- a resistor device coupled to the gate all around transistor and configured to store a data value of the resistive random access memory cell and including:
- a first electrode including a plurality of stacked metal nanosheets;
- a resistive element wrapped around each of the metal nanosheets;
- and
- a second electrode including the gate metal wrapped around the metal nanosheets and separated from the metal nanosheets by the resistive element, wherein generating the physical unclonable function data includes generating the physical unclonable function data based on currents flowing through the metal nanosheets and resistive elements of the random access memory cells.
10 more elements
Dependencies are inferred from the claim text.