Resistive memory device

A resistive memory device comprising:

• a first row line extending in a first direction;
• first and second column lines extending in a second direction intersecting the first direction and spaced apart from each other in the first direction;
• a first upper selection line extending in the second direction and connected to the first column line to continuously form a current path between the first upper selection line and the first column line;
• a second upper selection line extending in the second direction and connected to the second column line to continuously form a current path between the second upper selection line and the second column line;
• and
• a memory cell which is connected to the first row line and stores data,
• wherein the first upper selection line is activated and the second upper selection line is deactivated in response to a read command for reading the data stored in the memory cell.

A resistive memory device comprising:

• a substrate;
• first and second row lines extending in a first direction and spaced apart from each other in a second direction, on the substrate, wherein the second direction intersects the first direction;
• first and second column lines extending in the second direction and spaced apart from each other in the first direction, on the substrate;
• first and second upper selection lines extending in the second direction, between the first and second row lines and the first and second column lines;
• first and second lower selection lines extending in the first direction, between the first and second upper selection lines and the first and second column lines;
• a memory cell which is connected to the first row line and the first column line and stores data;
• first and second impurity regions spaced apart from each other in a third direction with the first upper selection line interposed therebetween, wherein the third direction intersects the first and second directions;
• and
• a third impurity region placed on a first side of the first lower selection line,
• wherein the second impurity region is placed on a second side, opposite to the first side, of the first lower selection line and spaced apart from the third impurity region in the third direction, and
• wherein the first upper selection line and the first lower selection line are activated and the second upper selection line and the second lower selection line are deactivated, in response to a read command for reading the data stored in the memory cell.