G11C 2213/75
Array having a nand structure comprising
Official title: Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor
G11C2213/75 (Array having a nand structure comprising) appears on 331 US grants and 347 published applications in this corpus.
Search patents in G11C- Granted patents
- 331
- Published applications
- 347
- Assignees
- 85
- Inventors
- 471
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 3 |
| 2004 | 3 | 3 |
| 2005 | 0 | 4 |
| 2006 | 5 | 9 |
| 2007 | 4 | 10 |
| 2008 | 6 | 14 |
| 2009 | 10 | 16 |
| 2010 | 16 | 13 |
| 2011 | 13 | 28 |
| 2012 | 19 | 16 |
| 2013 | 16 | 20 |
| 2014 | 28 | 22 |
| 2015 | 23 | 14 |
| 2016 | 24 | 24 |
| 2017 | 26 | 30 |
| 2018 | 25 | 15 |
| 2019 | 22 | 21 |
| 2020 | 21 | 17 |
| 2021 | 11 | 13 |
| 2022 | 14 | 25 |
| 2023 | 17 | 14 |
| 2024 | 15 | 7 |
| 2025 | 10 | 7 |
| 2026 | 3 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Dynamic write selection for shelf-life retention in non-volatile memories16 Jun 2026US 12,658,234 B2Intel Corporation
- Memory device for in-memory computing16 Jun 2026US 12,658,256 B2Macronix International Co., Ltd.
- Integrated circuit device and methods24 Mar 2026US 12,586,619 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Nonvolatile memory device and operating method of the same28 Oct 2025US 12,457,754 B2Samsung Electronics Co., Ltd.
- Resistive memory device and method of operating the resistive memory device14 Oct 2025US 12,444,464 B2SK hynix Inc.
- Semiconductor device, electronic apparatus including the same, and method of manufacturing the semiconductor device13 Aug 2026US 2026/0239674 A1Samsung Electronics Co., Ltd.
- Memory device and memory system9 Jul 2026US 2026/0196267 A1Macronix International Co., Ltd.
- Memory device with memory strings using variable resistance memory regions6 Nov 2025US 2025/0344407 A1Kioxia Corporation
- Cross-point pillar architecture for memory arrays10 Jul 2025US 2025/0226029 A1Micron Technology, Inc.
- Vertical nonvolatile memory device including memory cell string19 Jun 2025US 2025/0201307 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Resistive memory devices having a not-and (NAND) structure242US 8,107,276 B2International Business Machines Corporation · 2012
- Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same235US 7,843,718 B2Samsung Electronics Co., Ltd. · 2010
- Non-volatile resistance switching memories and methods of making same229US 7,778,063 B2Symetrix Corporation · 2010
- Semiconductor storage device220US 7,864,568 B2Renesas Electronics Corporation · 2011
- Nonvolatile semiconductor memory device and data erase/write method thereof218US 7,742,331 B2Kabushiki Kaisha Toshiba · 2010