Nonvolatile memory device and operating method of the same

An operating method of a nonvolatile memory device, the nonvolatile memory device including a conductive pillar and a memory cell array along a side of the conductive pillar, the operating method comprising:

• applying a turn-off voltage to a selection memory cell in the memory cell array;
• applying a turn-on voltage to a non-selection memory cell in the memory cell array;
• and
• during an operation on the selection memory cell, applying a first voltage to the conductive pillar and applying a second voltage to the memory cell array, the second voltage being different from the first voltage, wherein
• a difference between the first voltage and the second voltage is less than an absolute value of the second voltage.

An operating method of a nonvolatile memory device, the nonvolatile memory device including a conductive pillar and a memory cell array along a side of the conductive pillar, the operating method comprising:

• applying a turn-off voltage to a selection memory cell in the memory cell array;
• applying a turn-on voltage to a non-selection memory cell in the memory cell array;
• and
• during an operation on the selection memory cell, applying a first voltage to the conductive pillar and applying a second voltage to the memory cell array, the second voltage being different from the first voltage,
• wherein a difference between the first voltage and the second voltage is less than a difference between the turn-on voltage and the turn-off voltage.