G11C 2213/80
Array wherein the substrate, the cell, the conductors and the access device
Official title: Array wherein the substrate, the cell, the conductors and the access device are all made up of organic materials
G11C2213/80 (Array wherein the substrate, the cell, the conductors and the access device) appears on 15 US grants and 19 published applications in this corpus.
Search patents in G11C- Granted patents
- 15
- Published applications
- 19
- Assignees
- 14
- Inventors
- 36
- Latest grant
- 26 Aug 2025
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|---|---|---|
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| 2009 | 1 | 3 |
| 2010 | 1 | 3 |
| 2011 | 2 | 0 |
| 2012 | 3 | 1 |
| 2013 | 0 | 0 |
| 2014 | 0 | 2 |
| 2015 | 0 | 0 |
| 2016 | 0 | 1 |
| 2017 | 0 | 0 |
| 2018 | 1 | 0 |
| 2019 | 1 | 0 |
| 2020 | 0 | 2 |
| 2021 | 1 | 1 |
| 2022 | 2 | 0 |
| 2023 | 0 | 1 |
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Recent patents
- Flexible memory systems and related methods26 Aug 2025US 12,402,547 B1Arizona Board of Regents acting for and on behalf of Northern Arizona University
- Semiconductor device and electronic device9 Jan 2024US 11,870,436 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device and electronic device29 Nov 2022US 11,515,873 B2Semiconductor Energy Laboratory Co.Ltd.
- Control apparatus, array-type sensor, sensor usage method, control method, and program6 Sep 2022US 11,435,251 B2NEC Corporation
- Programmable resistance memory on thin film transistor technology9 Feb 2021US 10,916,317 B2Attopsemi Technology Co., LTD
- Semiconductor device and electronic device23 Mar 2023US 2023/0093256 A1Semiconductor Energy Laboratory Co.Ltd.
- Control apparatus, array-type sensor, sensor usage method, control method, and program11 Mar 2021US 2021/0072108 A1NEC Corporation
- Programmable resistance memory on thin film transistor technology9 Jul 2020US 2020/0219574 A1Attopsemi Technology Co., LTD
- Semiconductor device and electronic device2 Jan 2020US 2020/0007114 A1Semiconductor Energy Laboratory Co., Ltd.
- Nano structures, device using the same, and method for fabricating the nano structures9 Jun 2016US 2016/0158794 A1SK Innovation Co., Ltd.
Most cited
By later US patents
- Programmable resistance memory on thin film transistor technology8US 10,916,317 B2Attopsemi Technology Co., LTD · 2021
- Charge mapping memory array formed of materials with mutable electrical characteristics5US 7,679,951 B2Palo Alto Research Center Incorporated · 2010
- Semiconductor device and manufacturing method thereof5US 8,212,238 B2Semiconductor Energy Laboratory Co.Ltd. · 2012
- Charge mapping memory array formed of materials with mutable electrical characteristics3US 8,040,722 B2Palo Alto Research Center Incorporated · 2011
- Charge mapping memory array formed of materials with mutable electrical characteristics3US 8,040,729 B2Palo Alto Research Center Incorporated · 2011