Charge mapping memory array formed of materials with mutable electrical characteristics
AssigneePalo Alto Research Center Incorporated
InventorsWilliam S. Wong, Sanjiv Sambandan, Tse Nga Ng, Robert A. Street
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Abstract
A memory cell array including a data line; a capacitor; and a transistor coupled between the data line and the capacitor. At least one of the capacitor and the transistor includes a material with a mutable electrical characteristic. A memory cell array including a first transistor coupled between a first node, a second node, and a third node; and a second transistor coupled between the second node and a fourth node. The first transistor includes a material with a mutable electrical characteristic.
Claims10
A method of storing data in a memory cell, comprising:
- changing a mutable electrical characteristic of a material in the memory cell;
- discharging a charge stored in the memory cell;
- and
- sensing a state of the mutable electrical characteristic to read the data in response to the discharging.
A method of storing data in a memory cell, comprising:
- changing a mutable electrical characteristic of a material in the memory cell, the material being part of a first transistor of the memory cell;
- applying a bias to the first transistor to change the mutable electrical characteristic through a second transistor by charging a capacitor through the second transistor and applying the bias on the first transistor after turning off the second transistor using the capacitor;
- discharging a charge stored in the memory cell;
- and
- sensing a state of the mutable electrical characteristic to read the data in response to the discharging.
A method of storing data in a memory cell, comprising:
- changing a mutable electrical characteristic of a material in the memory cell, the material being part of a transistor of the memory cell;
- applying a bias to a transistor to change the mutable electrical characteristic;
- discharging a charge stored in the memory cell;
- and
- sensing a state of the mutable electrical characteristic to read the data in response to the discharging by measuring current passing through the transistor, comparing the current to a reference current passing through the transistor when the mutable electrical characteristic is in a first state, and generating the data in response to the comparison.
Dependencies are inferred from the claim text.