Charge mapping memory array formed of materials with mutable electrical characteristics
AssigneePalo Alto Research Center Incorporated
InventorsWilliam S. Wong, Sanjiv Sambandan, Tse Nga Ng, Robert A. Street
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Abstract
A memory cell array including a data line; a capacitor; and a transistor coupled between the data line and the capacitor. At least one of the capacitor and the transistor includes a material with a mutable electrical characteristic. A memory cell array including a first transistor coupled between a first node, a second node, and a third node; and a second transistor coupled between the second node and a fourth node. The first transistor includes a material with a mutable electrical characteristic.
Claims8
A memory cell array, comprising:
- a data line;
- and
- a memory cell including a component coupled to the data line having an organic material with a mutable electrical characteristic;
- wherein the memory cell is configured to store data in a state of the mutable electrical characteristic of the material.
A memory cell array, comprising:
- a data line;
- and
- a memory cell including a capacitor coupled to the data line having a material with a mutable electrical characteristic;
- wherein the memory cell is configured to store data in a state of the mutable electrical characteristic of the material.
A memory cell array, comprising:
- a data line;
- a memory cell including a component coupled to the data line having a material with a mutable electrical characteristic;
- wherein the memory cell is configured to store data in a state of the mutable electrical characteristic of the material;
- and
- a sense circuit configured to sense a time constant associated with the memory cell, where the time constant is dependent on the state of the mutable electrical characteristic of the material.
Dependencies are inferred from the claim text.