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US 12,402,547 B1Granted
Flexible memory systems and related methods
AssigneeArizona Board of Regents acting for and on behalf of Northern Arizona University
InventorsYing-Chen Chen, John Gibbs
Life of this patent
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Abstract
Implementations of a resistive random access memory may include a bottom electrode; a helical layer of hafnium oxide coupled to the bottom electrode; an isolation layer coupled to the helical layer; and a top electrode coupled to the isolation layer.
Claims20
A resistive random access memory comprising:
- a bottom electrode;
- a helical layer of hafnium oxide coupled to the bottom electrode;
- an isolation layer coupled to the helical layer;
- and
- a top electrode coupled to the isolation layer.
2 more elements
A resistive random access memory comprising:
- a bottom electrode;
- a helical layer of tungsten oxide coupled to the bottom electrode;
- an isolation layer coupled to the helical layer;
- and
- a top electrode coupled to the isolation layer.
2 more elements
A method of forming a flexible memory system, the method comprising:
- forming a film of resistive random access memory cells on a polymer transfer layer, each resistive random access memory cell comprising:
- a bottom electrode;
- a helical layer of one of hafnium oxide or tungsten oxide coupled to the bottom electrode;
- an isolation layer coupled to the helical layer;
- and
- a top electrode coupled to the isolation layer;
- transferring the film of resistive random access memory cells to a thermal release tape;
- patterning the film of resistive random access memory cells;
- and
- transferring the patterned film of resistive random access memory cells to a flexible substrate.
7 more elements
Dependencies are inferred from the claim text.