G11C 2213/77
Array wherein the memory element being directly connected to the bit lines
Official title: Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
G11C2213/77 (Array wherein the memory element being directly connected to the bit lines) appears on 1,156 US grants and 1,210 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,156
- Published applications
- 1,210
- Assignees
- 213
- Inventors
- 1,408
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 3 | 0 |
| 2001 | 4 | 4 |
| 2002 | 7 | 19 |
| 2003 | 14 | 35 |
| 2004 | 32 | 54 |
| 2005 | 46 | 54 |
| 2006 | 37 | 58 |
| 2007 | 48 | 56 |
| 2008 | 36 | 53 |
| 2009 | 44 | 39 |
| 2010 | 47 | 37 |
| 2011 | 45 | 45 |
| 2012 | 43 | 41 |
| 2013 | 40 | 38 |
| 2014 | 47 | 65 |
| 2015 | 62 | 52 |
| 2016 | 66 | 74 |
| 2017 | 80 | 58 |
| 2018 | 57 | 48 |
| 2019 | 65 | 98 |
| 2020 | 86 | 79 |
| 2021 | 68 | 68 |
| 2022 | 42 | 63 |
| 2023 | 52 | 30 |
| 2024 | 41 | 22 |
| 2025 | 30 | 14 |
| 2026 | 8 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Resistive memory device18 Aug 2026US 12,713,621 B2Samsung Electronics Co., Ltd.
- Heat dissipation in resistive memories11 Aug 2026US 12,707,903 B2Virginia Tech Intellectual Properties, Inc.
- Device and method with multidimensional vector neural network12 May 2026US 12,626,089 B2Samsung Electronics Co., Ltd.
- Resistive switching memory device including dual active layer and array including the same12 May 2026US 12,628,575 B2Research & Business Foundation Sungkyunkwan University
- In-memory resonator network for factorizing hyper vectors24 Feb 2026US 12,561,553 B2International Business Machines Corporation
- Device and method with multidimensional vector neural network27 Aug 2026US 2026/0252840 A1Samsung Electronics Co., Ltd.
- Sequence for first fire and forming in cross-point arrays6 Aug 2026US 2026/0229285 A1SanDisk Technologies LLC
- Ultra-large scale in-memory computing core circuit for resolving ir-drop issues23 Jul 2026US 2026/0212925 A1Huazhong University of Science and Technology
- Memory performing computing operation21 May 2026US 2026/0141936 A1SK hynix Inc.
- Memory array decoding and interconnects15 Jan 2026US 2026/0018192 A1Micron Technology, Inc.
Most cited
By later US patents
- Molecular wire crossbar memory590US 6,128,214 AHewlett-Packard Company · 2000
- Electrically addressable passive device, method for electrical addressing of the same and uses of the device and the method377US 6,055,180 AThin Film Electronics ASA · 2000
- Nanotube films and articles330US 6,706,402 B2Nantero, Inc. · 2004
- Programmable sub-surface aggregating metallization structure and method of making same313US 6,418,049 B1Arizona Board of Regents · 2002
- Molecular-wire crossbar interconnect (MWCI) for signal routing and communications278US 6,314,019 B1Hewlett-Packard Company · 2001